Radio frequency shielding within a semiconductor package

ABSTRACT

Radio frequency shielding within a semiconductor package is described. In one example, a multiple chip package has a digital chip, a radio frequency chip, and an isolation layer between the digital chip and the radio frequency chip. A cover encloses the digital chip and the radio frequency chip.

FIELD

The present disclosure relates to the field of multiple chip packagingand, in particular, to placing chips of different types into a singlepackage.

BACKGROUND

Semiconductor and micromechanical dies or chips are frequently packagedfor protection against an external environment. The package providesphysical protection, stability, external connections, and in some cases,cooling to the die inside the packages. Typically the die is attached toa substrate and then a cover that attaches to the substrate is placedover the die. While there is a trend to add more functions to each die,there is also a trend to put more than one chip in a single package.Since a package is typically much larger than the die that it contains,additional dies can be added without significantly increasing the sizeof the package. Current packaging technologies include stacking dies ontop of each other and placing dies side-by-side on a single packagesubstrate. Consolidating more functions into a single die and placingmore dies into a single package are ways to reduce the size of theelectronics and micromechanics in a device.

Some desktop and notebook systems already combine a central processingunit and a graphics processor in a single package. In other cases, amemory die is combined in a package with a processor. For portabledevices, more dies may be added to a package to form what is referred toas a complete SiP (System in a Package).

As wireless connectivity is expanded to more devices and the sizes ofthese devices are reduced, RF (Radio Frequency) packages are placed evercloser to digital and baseband packages. The digital and basebandpackages typically generate noise and interference that can disrupt orimpair the operation of the RF systems. As a result, the RF modem istypically shielded by a metal case that covers the package or is a partof the package to avoid interference from the digital circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention are illustrated by way of example, and notby way of limitation, in the figures of the accompanying drawings inwhich like reference numerals refer to similar elements.

FIG. 1A is a cross sectional side view diagram of a multiple chip wirebonded package according to an embodiment.

FIG. 1B is a cross sectional side view diagram of a multiple chip flipchip package according to an embodiment.

FIG. 2A is a cross sectional side view diagram of a multiple chipstacked wire bonded package according to an embodiment.

FIG. 2B is a cross sectional side view diagram of a multiple chip flipchip package according to an embodiment.

FIG. 2C is a cross sectional side view diagram of a stacked multiplechip package according to an embodiment.

FIG. 3A is a cross sectional side view diagram of a multiple chipembedded wafer level ball grid array package according to an embodiment.

FIG. 3B is a cross sectional side view diagram of a stacked multiplechip embedded wafer level ball grid array package according to anembodiment.

FIG. 3C is a cross sectional side view diagram of a multiple chipembedded wafer level ball grid array package with two redistributionlayers according to an embodiment.

FIG. 4A is a cross sectional side view diagram of a multiple chippackage with stacked and side-by-side dies according to an embodiment.

FIG. 4B is a process flow diagram of forming a multiple chip packageaccording to an embodiment.

FIG. 5 is a block diagram of a computing device incorporating a multipledie package according to an embodiment.

DETAILED DESCRIPTION

RF, digital, and baseband chips fabricated in different chip processesare often packaged and the packages are placed on a single PCB (PrintedCircuit Board). For even smaller form factors, these chips can becombined together into a common package. Metal shields can be used toprevent the digital chips from interfering with the RF circuitry.Digital circuitry and the power supplies for such circuitry may operateat frequencies of from 500 MHz to 3 Ghz. A single digital chip may havemillions of switches operating at these frequencies and creating noiseat these frequencies and at the overtones of these frequencies. Thisnoise can radiate from the digital circuitry into other parts of apackage or even a system. These frequencies are in or close to the radiofrequency ranges that are used by electronic systems for wirelesscommunications. As a result, antennas, filters, multiplexers,modulators, up and down converters, and amplifiers or gain stages canall be impacted by the noise generated by a nearby digital chip.

Mobile communication systems and wireless connectivity devices haveseveral chips like application processors, memories. BB (Baseband)communication processors, and the RF modem. On a mobile PCB, the RFmodem is typically separated out from the other components and shieldedby a metal case to avoid interference from the digital circuitry. Thesystem can be made smaller by incorporating the whole system in onepackage. This creates difficulties in shielding the RF sub-system thatis inside the same package with the digital and baseband system.

As described herein, different chips forming part of or even a completemobile system are packaged together as a SiP (System in a Package). Thesensitive RF modem may be isolated by shield layers of metal or anotherappropriate material to reduce the impact of the aggressive digitalcircuits which are clocked with frequencies lying in the RF frequencyranges.

The package and shielding allow several chips to be combined to form acomplete mobile system in a single package. The package can include theRF modem which is sensitive to the interference coming from theoperation of the digital circuits. The chips that contain the digitalcircuits might be an application processor, a memory, a power managementunit, a baseband signal processing circuit and any of a variety of otherdifferent chips.

Rather than using discrete isolation layers, the sensitive RF chips maybe shielded with isolation layers embedded around the RF sub-system.Interconnects between the different chips within the package may bypassthe shielding layer or be routed through an uncritical cut-out of theshield, The shield may be coupled by some routing or wire connection toa common shielding ground which is connected to the PCB ground layer. Inthis way, the isolation of the RF macros is improved avoiding crosstalkfrom the aggressive digital circuits to the sensitive RFfunctionalities.

FIG. 1A is a cross sectional side view diagram of a multiple chippackage. The package has a substrate 103 and a ball grid array 105coupled to the substrate. The substrate carries at least two dies 107,109. One of the dies is a digital circuit and the other die is a radiofrequency circuit. The dies are contained in the package and protectedby a cover 113. The cover may be a metal or plastic cover or it may beformed of a molding compound or any other suitable cover material. Inthe example of FIG. 1A, the dies are wire bonded to the substrate andone of the dies is covered with a metal shield 111. Either the digitaldie or the RF die may be covered by the shield or both dies may becovered by the shield. The shield acts as an isolation layer formed overone of the dies inside the package. The isolation layer may be formed bychemical vapor deposition, by electroless plating, by electrolyticplating or in any of a variety of other ways. The isolation layer may beformed of a metal such as copper or aluminum or of any other suitable RFshielding material. Carbon, graphite or any other metal compositions maybe used.

The right side die 109 may be a digital circuit or an RF circuit and isshown as connected to the package substrate using wire leads 115. Whilethe wire leads are shown as being contained within the isolating shield,the wires may extend through the shield through vias or access holes.The wire leads may connect to the substrate 103 outside the shield orinside the shield.

FIG. 1B is a cross sectional side view diagram of a flip chip package.The package has a substrate 123 to which two dies 127, 129 are attachedusing a land grid array, a C4 (Controlled Collapse Chip Connection)array, or any other suitable flip type connection system. The dies areprotected by a cover 133 similar to the cover 113 of the wire bondedpackage. In addition, as in the example of FIG. 1A, one of the dies orboth of the dies is isolated by an isolation layer 131. The isolationlayer may be over the RF die, the digital die, or both to isolate one ofthe dies from the other.

FIG. 2A is a cross sectional side view diagram of a wire bonded packagein which the dies are stacked one on top of the other. The package has asubstrate 203 to which a ball grid array 205 is connected for connectionto a PCB (Printed Circuit Board) or another external device. A first 207and a second 209 die are placed on top of the substrate 203 andseparated by a dielectric layer 217 or layers internal to the dieprovided for isolation from the external environment or other dies. Thedies connect to the substrate electrically using wires 215. A cover 213encloses the dies and attaches to the substrate for protection from theexternal environment and from shock. An isolation layer 211 is formedover one of the dies to isolate radio frequency noise from one of thedies or, in other words, to prevent the operation of one of the diesfrom interfering with the other die. In the illustrated example the RFdie is first placed on the substrate 209 and connected to the substrateelectrically using the wire leads 215. Then the isolation layer 211 isplaced, formed, or deposited over the RF die. Alternatively, theisolation layer 211 may be formed directly over the die and then thewire leads 215 connected through vias, holes or some other pathway tothe die. Finally, the second die 207 is placed over the first die andover the isolation layer.

FIG. 2B is a cross sectional side view in which a first die 229 isattached to a substrate 223 as a flip chip package. The placed die isthen covered or surrounded by an isolation layer 231. A second die 227is placed over the isolation layer and the first die. The second die isattached to the substrate using wire leads. This forms a combinationflip chip and wire bonding stack. The stack is protected by a cover 233.As in the other examples, the substrate is coupled to some sort ofexternal connection 225 such as a ball grid array. In each of theexamples described above, the substrate may have simple connections itmay form a redistribution layer. It may have multiple metal interconnectlayers. It may serve as a fan-out layer or it may include additionalinterposers, transformers, or other devices incorporated into thesubstrate or placed next to the substrate.

FIG. 2C is a side cross sectional view of an alternative packageconfiguration in which dies are stacked. The stacked dies are connectedthrough silicon vias 257 to each other and also to the substrate 243.The substrate 243, similar to those described above, includes aconnection system 245 to external devices. A first die 249 is attachedto the substrate and electrically connected using vias 257. The die isisolated by an isolation layer 251 and a second die 247 is stacked ontop of the first die. Additional dies may be placed on top of the firsttwo dies to finish the complete system. A cover 253 is attached to thesubstrate to contain the dies and a heat spreader or heat sink 255 isplaced above the cover for cooling the dies within the package. Whileonly one die is shown as being protected by the isolation layer 251,additional ones of the dies may be protected or all of the dies may beprotected. A single isolation layer may surround one or more dies. Theadditional isolation layers may be used to isolate noise from each otherdie. The isolation layers may also be used as ground or power planesdepending on the particular implementation.

FIG. 3A shows an embedded wafer level ball grid array (eWLB) package inwhich two dies are placed side by side. A redistribution layer 303supports a first 307 and a second 309 die. The redistribution layerprovides a connection from the dies to external connections such as aball grid array 305. One or both of the dies is covered by an isolationlayer 311 and all of the dies are covered with a cover 313 such as amolding compound.

FIG. 3B shows an alternative eWLB package in which the dies are stacked.A redistribution layer 323 carries a first die 328 directly coupled tothe redistribution layer. A second die 329 is also coupled to theredistribution layer and is placed over the first die 328. The first andsecond die are isolated by an isolation layer 321. The isolation layerwith the first and second dies are covered by a molding compound 333. Athird die 327 and fourth die 326 are similarly connected to an upperredistribution layer 335. These two upper dies may be covered by anotherisolation layer or not depending on the particular implementation. Theredistribution layers 333 335 are coupled together and to externalconnections using vias through the molding compound 333.

FIG. 3C shows an alternative eWLB package in a cross sectional side viewdiagram. A redistribution layer 343 is coupled to side by side dies 347,349. One or both of the dies are covered by and protected by anisolation layer 351. There is a second redistribution layer 355 on topof the die and the top and bottom redistribution layers are coupledtogether by vias 357. The vias traverse through a molding compound 353which isolates the dies from the vias and isolates the redistributionlayers from each other. The example of FIG. 3C shows a side by side eWLBlike that of FIG. 3A but in which there is a lower and an upperredistribution layer as in the example of FIG. 3B. Other variations onthe packages shown and described herein are also possible.

FIG. 4A shows a more complex SiP (System in a Package) configuration inwhich six different dies are all coupled together within a singlepackage. The particular dies shown in this example are provided asexamples only. Different dies may be substituted for those shown and thedies may be arranged in a different way. The substrate or carrier 403may be a silicon package substrate or a redistribution layer as in FIG.3C or any other type of carrier. The substrate provides a connection toexternal components 405 such as by a ball grid array. A power managementunit 407 is attached to the substrate. A connection layer 409 is formedover the power management unit to allow the power management unit toconnect to other devices that are stacked on top of it. A connectionlayer may also be formed between the power management unit and thesubstrate 403. An application processor and baseband die 411 may beattached over the power management unit and connected to the powermanagement unit through the connection layer 409. A memory die 413 maybe attached and placed above the application processor to provide memoryresources for the processor.

A metal shield 415 is shown as extending across the package from one endof the memory die to the other end of the memory die and across theapplication processor. This metal shield serves to isolate noise fromthe digital circuits of the memory application processor and powermanagement unit from other components in the package.

An RF transceiver 417 is stacked over the metal isolation layer. Aconnection layer 409 is formed over the RF transceiver and a poweramplifier 421 and front end chip 419 are placed over the connectionlayer. This allows the power amplifier and front end chip to connect tothe RF transceiver through the connection layers 409. Filler 423 isapplied in any of the open gaps between any of the dies. In addition, anadditional metal shield 425 may be applied over all of the chips forfurther isolation from noise sources. A cover 427 surrounds all of thestacked and side by side dies to protect them from the externalenvironment.

In this example, the SIP includes stacked components and side by sidecomponents. For example, the memory is stacked over the applicationprocessor which is stacked over the power management unit. The memoryand the RF transceiver are placed side by side at one level and thepower amplifier and front end chip are placed side by side at anotherlevel. This combination of stacking and side by side placement allowsthe dies to be combined together into a very small package. In addition,the placement of shield layers allows different types of dies to beplaced close together in a single package. The particular order andposition of each of the dies may be modified to suit other applications.In addition, more or fewer or different dies may be used. The particulardies shown are useful for portable wireless devices, however, other diesmay be used for the same or different applications. The arrangement ofFIG. 4A is provided only as an example.

FIG. 4B is a process flow diagram providing a general process forcreating the packages described above. In the simplified process of FIG.4B, a silicon substrate or redistribution layer or other type of carrieris first taken as an initial structure. At 412, one or more digitalchips are placed on the carrier. At 414, one or more radio frequencychips are placed on the carrier. The order in which the chips are placedand the particular types of chips may be adapted to suit any particularimplementation.

At 416, metal interconnect layers are formed to connect the chips toeach other and to any external devices for example to a substrate or anyother material. At 418, isolation layers are formed between the chips toprotect the radio frequency chips from the noise of the digitalcircuits. The isolation layers may be used to shield or block any highfrequency noise from interfering with the radio frequency circuits. At420 vias are formed, depending on the particular type of packageconfiguration, to connect the chips through the isolation layers to eachother and to the metal interconnect layers. Alternatively bond wires maybe placed to make similar types of connections. Interconnect andisolation layers may be formed in any order and may alternate as shownin FIG. 4A. Similarly vias may be combined with wire bonds so thatdifferent connections may be made in different ways to suit the demandsof any particular type of package.

At 422, the temporary substrate or carrier may be removed depending onthe particular type of package. Following the removal of the substrateor carrier, a metal interconnect, redistribution, or fan-out layer maybe formed on the side of the dies from which the carrier was removed. At424, the package is finished by attaching a cover, applying moldingcompound, adding additional dielectric layers, or in any other waydepending on the particular type of package.

FIG. 5 illustrates a computing device 500 in accordance with oneimplementation of the invention. The computing device 500 houses a board502. The board 502 may include a number of components, including but notlimited to a processor 504 and at least one communication chip 506. Theprocessor 504 is physically and electrically coupled to the board 502.In some implementations, the at least one communication chip 506 is alsophysically and electrically coupled to the board 502. In furtherimplementations, the communication chip 506 is part of the processor504.

Depending on its applications, computing device 500 may include othercomponents that may or may not be physically and electrically coupled tothe board 502. These other components include, but are not limited to,volatile memory (e.g., DRAM) 508, non-volatile memory (e.g., ROM) 509,flash memory (not shown), a graphics processor 512, a digital signalprocessor (not shown), a crypto processor (not shown), a chipset 514, anantenna 516, a display 518 such as a touchscreen display, a touchscreencontroller 520, a battery 522, an audio codec (not shown), a video codec(not shown), a power amplifier 524, a global positioning system (GPS)device 526, a compass 528, an accelerometer (not shown), a gyroscope(not shown), a speaker 530, a camera 532, and a mass storage device(such as a hard disk drive) 510, compact disk (CD) (not shown), digitalversatile disk (DVD) (not shown), and so forth). These components may beconnected to the system board 502, mounted to the system board, orcombined with any of the other components.

The communication chip 506 enables wireless and/or wired communicationsfor the transfer of data to and from the computing device 500. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 506 may implement anyof a number of wireless or wired standards or protocols, including butnot limited to Wi-Fi (IEEE 802.11 family). WiMAX (IEEE 802.16 family),IEEE 802.20, long term evolution (LTE). Ev-DO, HSPA+, HSDPA+. HSUPA+,EDGE. GSM, GPRS. CDMA. TDMA, DECT, Bluetooth, Ethernet derivativesthereof, as well as any other wireless and wired protocols that aredesignated as 3G, 4G, 5G, and beyond. The computing device 500 mayinclude a plurality of communication chips 506. For instance, a firstcommunication chip 506 may be dedicated to shorter range wirelesscommunications such as Wi-Fi and Bluetooth and a second communicationchip 506 may be dedicated to longer range wireless communications suchas GPS. EDGE. GPRS, CDMA, WiMAX, LTE. Ev-DO, and others.

The processor 504 of the computing device 500 includes an integratedcircuit die packaged within the processor 504. In some implementationsof the invention, the integrated circuit die of the processor, memorydevices, communication devices, or other components include one or moredies that are packaged together using a multiple level redistributionlayer, if desired. The term “processor” may refer to any device orportion of a device that processes electronic data from registers and/ormemory to transform that electronic data into other electronic data thatmay be stored in registers and/or memory.

In various implementations, the computing device 500 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 500 may be any other electronic device that processes data.

Embodiments may be implemented as a part of one or more memory chips,controllers, CPUs (Central Processing Unit), microchips or integratedcircuits interconnected using a motherboard, an application specificintegrated circuit (ASIC), and/or a field programmable gate array(FPGA).

References to “one embodiment”, “an embodiment”. “example embodiment”,“various embodiments”, etc., indicate that the embodiment(s) of theinvention so described may include particular features, structures, orcharacteristics, but not every embodiment necessarily includes theparticular features, structures, or characteristics. Further, someembodiments may have some, all, or none of the features described forother embodiments.

In the following description and claims, the term “coupled” along withits derivatives, may be used. “Coupled” is used to indicate that two ormore elements co-operate or interact with each other, but they may ormay not have intervening physical or electrical components between them.

In the following description and claims, the terms “chip” and “die” areused interchangeably to refer to any type of microelectronic,micromechanical, analog, or hybrid small device that is suitable forpackaging and use in a computing device.

As used in the claims, unless otherwise specified, the use of theordinal adjectives “first”, “second”, “third”, etc., to describe acommon element, merely indicate that different instances of likeelements are being referred to, and are not intended to imply that theelements so described must be in a given sequence, either temporally,spatially, in ranking, or in any other manner.

The drawings and the forgoing description give examples of embodiments.Those skilled in the art will appreciate that one or more of thedescribed elements may well be combined into a single functionalelement. Alternatively, certain elements may be split into multiplefunctional elements. Elements from one embodiment may be added toanother embodiment. For example, orders of processes described hereinmay be changed and are not limited to the manner described herein.Moreover, the actions of any flow diagram need not be implemented in theorder shown; nor do all of the acts necessarily need to be performed.Also, those acts that are not dependent on other acts may be performedin parallel with the other acts. The scope of embodiments is by no meanslimited by these specific examples. Numerous variations, whetherexplicitly given in the specification or not, such as differences instructure, dimension, and use of material, are possible. The scope ofembodiments is at least as broad as given by the following claims.

The following examples pertain to further embodiments. The variousfeatures of the different embodiments may be variously combined withsome features included and others excluded to suit a variety ofdifferent applications. Some embodiments pertain to a a multiple chippackage that includes a digital chip, a radio frequency chip, anisolation layer between the digital chip and the radio frequency chip,and a cover enclosing the digital chip and the radio frequency chip.

In further embodiments, the isolation layer is formed over the digitalchip and adjacent to the digital chip. The isolation layer is ametallization layer. The metallization layer is formed by chemical vapordeposition over the radio frequency chip. The isolation layer is formedof copper.

Further embodiments include a redistribution layer adjacent to theisolation layer to electrically connect the digital chip to the radiofrequency chip. In further embodiments, the digital chip and the radiofrequency chip are stacked within the package. The digital chip is aprocessor and the radio frequency chip is a radio transceiver. Thepackage includes a memory chip coupled to the processor and a radiofrequency power amplifier coupled to the transceiver and the isolationlayer is between the processor and the memory chip on one side andbetween the radio transceiver and the power amplifier on the other side.

Further embodiments include a plurality of interconnects between thedigital chip and the radio frequency chip, wherein the interconnectsbypass the isolation layer. Further embodiments include a plurality ofinterconnects between the digital chip and the radio frequency chip,wherein the interconnects pass through a respective plurality of cutopenings in the isolation layer. Further embodiments include a packagesubstrate to which the cover is attached, the package substrate beingdirectly attached to the digital chip through a redistribution layer.Further embodiments include a ground plane connection from the isolationlayer to the substrate.

Some embodiments pertain to a method that includes placing a digitalchip, placing a radio frequency chip, forming an isolation layer betweenthe digital chip and the radio frequency chip, and attaching a coverenclosing the digital chip and the radio frequency chip to form apackage.

In further embodiments, placing comprises placing over a carrier, themethod further comprising removing the carrier after forming theisolation area. Further embodiments include forming vias through theisolation layer to electrically connect the digital chip and the radiofrequency chip. Further embodiments include forming a redistributionlayer after forming the isolation layer to connect the digital chip andthe radio frequency chip to external components.

In further embodiments, placing the radio frequency chip comprisesplacing the radio frequency chip beside the digital chip on a commonsubstrate. Placing the radio frequency chip comprises placing the radiofrequency chip over the digital chip and the isolation layer so that theradio frequency chip is stacked on the digital chip. Further embodimentsinclude forming a redistribution layer over the radio frequency chip.

Some embodiments pertain to a computing system with a user interfacecontroller, an antenna, and a multiple chip package having a digitalchip coupled to the user interface controller, a radio frequency chip,coupled to the antenna, an isolation layer between the digital chip andthe radio frequency chip, and a cover enclosing the digital chip and theradio frequency chip. In further embodiments the isolation layer is ametallization layer formed over the digital chip by deposition.

What is claimed is:
 1. A portable wireless device comprising: atouchscreen; a controller capable of controlling the touchscreen; anantenna; a multiple chip package having a digital chip coupled to thecontroller, a radio frequency chip coupled to the antenna, an isolationstructure between the digital chip and the radio frequency chip, a coverenclosing the digital chip and the radio frequency chip, and a substratethat couples to the digital chip and the radio frequency chip, and thatis electrically connected to the isolation structure and the cover. 2.The portable wireless device of claim 1, further including a front endchip.
 3. The portable wireless device of claim 2, further including apower amplifier chip.
 4. The portable wireless device of claim 3,wherein at least some chips in the multiple chip package are in astacked configuration.
 5. The portable wireless device of claim 1,wherein the isolation structure includes a layer formed over the digitalchip.
 6. The portable wireless device of claim 1, wherein the digitalchip and the radio frequency chip are spaced apart laterally, and theisolation structure includes a vertical conductor positioned between thedigital chip and the radio frequency chip.
 7. A portable wireless devicecomprising: a touchscreen; a controller capable of controlling thetouchscreen; an antenna; a multiple chip package having a digital chipcoupled to the controller, a radio frequency chip coupled to theantenna, an isolation structure between the digital chip and the radiofrequency chip, a cover enclosing the digital chip and the radiofrequency chip, and one or more substrates that couple to the digitalchip and the radio frequency chip, and that are electrically connectedto the isolation structure and the cover.
 8. The portable wirelessdevice of claim 7, wherein the digital chip and the radio frequency chipare coupled by vias.
 9. The portable wireless device of claim 8, whereinthe vias pass through a mold compound.
 10. The portable wireless deviceof claim 7, wherein the one or more substrates include a topredistribution layer and a bottom redistribution layer.
 11. The portablewireless device of claim 10, wherein the top redistribution layer andthe bottom redistribution layer are configured opposite each other withthe digital chip and the radio frequency chip located in between the topredistribution layer and the bottom redistribution layer.
 12. A portablewireless device comprising: a touchscreen; a controller capable ofcontrolling the touchscreen; an antenna; a multiple chip package havinga digital chip coupled to the controller, a radio frequency chip coupledto the antenna, an isolation structure between the digital chip and theradio frequency chip, a cover enclosing the digital chip and the radiofrequency chip, and a carrier that couples to the digital chip and theradio frequency chip, and that is electrically connected to theisolation structure and the cover.
 13. The portable wireless device ofclaim 12, wherein the carrier includes an embedded wafer level ball gridarray (eWLB).
 14. The portable wireless device of claim 12, wherein thedigital chip and the radio frequency chip are arranged in a side by sideconfiguration.
 15. The portable wireless device of claim 12, wherein thecarrier is a package substrate.
 16. The portable wireless device ofclaim 12, wherein the digital chip and the radio frequency chip arespaced apart laterally, and the isolation structure includes a verticalconductor positioned between the digital chip and the radio frequencychip.